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TC2997B
REV0_20040412
1.9 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
FEATURES
* 20W Typical Power at 1.9 GHz * 12 dB Typical Linear Power Gain at 1.9 GHz * High Linearity: IP3 = 52 dBm Typical * High Power Added Efficiency: Nominal PAE of 40 % * Suitable for High Reliability Application * Lg = 1 m, Wg = 50 mm * 100 % DC and RF Tested
PHOTO ENLARGEMENT
* Flange Ceramic Package
DESCRIPTION The TC2997B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power amplifier for commercials applications.
ELECTRICAL SPECIFICATIONS ( @ 1.9 GHz )
Symbol P1dB GL IP3 PAE IDSS gm VP BVDGO Rth CONDITIONS Output Power at 1dB Gain Compression Point VDS = 10.5 V, IDS = 5A Linear Power Gain VDS = 10.5 V, IDS = 5A Intercept Point of the 3rd-order Intermodulation VDS = 10.5 V, IDS = 5A, *PSCL = 32 dBm Power Added Efficiency at 1dB Compression Power Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V Transconductance at VDS = 2 V, VGS = 0 V Pinch-off Voltage at VDS = 2 V, ID = 60 mA Drain-Gate Breakdown Voltage at IDGO =15 mA Thermal Resistance
20 MIN 42 11 TYP 43 12 52 40 12.5 9000 -1.7 22 0.9 MAX UNIT dBm dB dBm % A mS Volts Volts C/W
* PSCL: Output Power of Single Carrier Level.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P1/3
TC2997B
REV0_20040412
ABSOLUTE MAXIMUM RATINGS at 25 C
Symbol VDS VGS IDS Pin PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current RF Input Power, CW Continuous Dissipation Channel Temperature Storage Temperature Rating 12 V -5 V IDSS 37 dBm 100 W 175 C - 65 C to +175 C
HANDLING PRECAUTIONS:
The user must operate in a clean, dry environment. Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. The static discharge must be less than 300V.
FLANGE PACKAGE OUTLINE (in mm)
Gate
Source
Source
Drain
TYPICAL COMMON SOURCE SCATTERING PARAMETERS (VD = 10.5 V, ID = 5 A)
FREQUENCY (GHz) 1 2 3 4 5 6 S11 MAG 0.98447 0.89499 0.99590 0.99889 0.99929 0.99934 ANG 175.60 175.92 170.70 165.88 161.45 157.00 S21 MAG 0.89405 1.01350 0.12798 0.04273 0.02065 0.01208 S12 ANG 58.716 -35.168 -99.501 -109.58 -115.98 -121.61 MAG 0.004436 0.011258 0.002725 0.001526 0.001113 0.000908 ANG -11.953 -80.437 -127.56 -127.53 -127.40 -128.39 MAG 0.83047 0.96855 0.98934 0.98926 0.99039 0.99112 S22 ANG -171.23 -173.25 176.29 171.49 167.26 163.24
EVALUATION BOARD
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Shanhua Jen, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P2/3
TC2997B
REV0_20040412
PCB Material: FR4 ER = 4.6 Thickness = 31 mil Unit: mil
TC2997B
Part Type Resistor Resistor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor
Reference Designator R1 R2 Ci1 Ci2 Ci3 Ci4 Ci5 Co1 Co2 Co3 Co4 Co5
Description 10 ohm 0603 0 ohm 0603 1.2 pF 0603 1.0 pF 0603 1.5 pF 0603 1000 pF 0603 10 uF 1206 2.2 pF 1212 1.5 pF 1212 1000 pF 0603 0.1 uF 0603 10 uF 1206
Manufacturer
Murata Murata Murata Murata Murata Temex Temex Murata Murata Murata
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P3/3

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